一、個人簡介
金敏，男🦵，1982年6月生，博士，教授，2021年入選上海市曙光學者。長期從事先進材料研究及產業化，在Science🧫、ACS Energy Lett.、Nano Energy、Chem. Eng. J.、Chem.Mater.🍡、ACS Appl. Mater. Inter.等期刊上發表論文100余篇，申請專利20余項👩🏻🦯，出版專著一部🏌🏼♀️。主持或參與科研項目20余項，包括國家自然科學基金面上項目、國家自然科學基金青年項目、中科院重大知識創新項目👰🏽♀️、上海市自然科學基金👨🏼🦰、上海科委科研計劃項目、江蘇省創新創業項目、浙江省自然科學基金等💁🏻♀️。曾獲中華人民共和國教育部科技成果完成者證書，第一、二屆人工晶體青年學術會議優秀青年學者及中國石油和化學工業優秀出版物二等獎🤸♀️。
二、主要學習與工作經歷
1999-2003：中國地質大學🧑🏿✈️，學士
2003-2008：中科院上海矽酸鹽研究所，碩博連讀
2008-2015：上海應用技術大學，講師、副教授
2015-2016🔴：昆山鼎晶镓業晶體材料有限公司，技術總監
2016-2018：中科院寧波材料所，教授級高工
2018.10-至今：门徒平台🛌🏽🦇，教授
三📷🤴、代表性科研成果
（1）代表性學術成果🦘：在Science (2020, 369: 542-545)期刊發表重要論文⚖️，報道發現一種InSe半導體晶體具有超塑性力學特征，為柔性電子研究與應用開辟了一條新途徑✫。該工作入選2020年上海市科技進步報告“基礎研究成果國際影響力顯著提升”板塊👳🏿♂️，並進一步被選為當年全市42篇Science成果中的唯一代表作🎴。
（2）代表性應用成果：突破國外技術壟斷，自主開發了一種多坩堝下降
法技術生長GaAs半導體晶體👇，實現了國產化🤞🏿。該工作從基礎研究走向商業化🪂，產品批量出口日韓市場，受到客戶肯定。相關技術經中科院上海科技查新中心檢索➰，認為處於國際先進水平。該工作的重要意義不僅在於開發了具有自主知識產權的GaAs晶體生長技術💇🏻♂️，更重要的是建立了一套成熟的半導體晶體研發體系，為將來其他半導體晶體研究奠定了紮實的科學技術基礎👳🏻♀️。
（3）近年來發表的論文：
(1)Tianran Wei,Min Jin, Yuecun Wang, et.al. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe. Science.2020, 369, 542-545.
(2)Min Jin, Siqi Lin, Wen Li, Xinyue Zhang, Yanzhong Pei. Nearly isotropic transport properties in anisotropically structured ntype single-crystalline Mg3Sb2. Materials Today Physics. 2021, 21, 100508.
(3)JIN Min,BAI Xudong, ZHANG Rulin, ZHOU Lina, LI Rongbin. Metal Sulfide Ag2S: Fabrication via Zone Melting Method and Its Thermoelectric Property. Journal of Inorganic Materials.2022, 37(1): 101-106.
(4)Min Jin, XiaoLei Shi, Tianli Feng, et al., Super Large Sn1-xSe Single Crystals with Excellent Thermoelectric Performance. ACS Applied Materials & Interfaces. 2019, 11: 8051-8059.
(5)Chaopeng Zhao, Weishan Yan, Suqin Han, Wangyang Zhang, Min Jin, Duo Liu，Mechanically accessible band engineering via indentation-induced phase transition on two-dimensional layered β-InSe.Applied Surface Science.2022,604:154573.
(6)Hongli Zhang, Min Jin, Hui Shen, and Jiayue Xu. Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method. Cryst. Res. Technol.2022, 2100247.
(7)Min Jin, Feng He, Shuying Zheng, Yadong Xu, Yan Peng, Xiufei Chen, and Xiangang Xu. Growth of ZnTe Semiconductor Crystal Via a Te Flux Zone Melting Method and Characterization of Its properties. Cryst. Res. Technol. 2022, 2100279.
(8)Fengrui Sui, Min Jin, Yuanyuan Zhang, Jin Hong, et al. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. J. Phys.: Condens. Matter. 2022, 34: 224006.
(9)Min Jin, Jiasheng Liang, Pengfei Qiu, Hui Huang, Zhongmou Yue, Lina Zhou, Rongbin Li,Lidong Chen, and Xun Shi. Investigation on Low-Temperature Thermoelectric Properties ofAg2Se Polycrystal Fabricated by Using Zone-Melting Method. The Journal of Physical Chemistry Letters. 2021, 12, 8246-8255.
(10)Min Jin, Liangtao Zheng, Cheng Sun, et al. Manipulation of hole and band for thermoelectric enhancements in SrCd2Sb2Zintl compound. Chemical Engineering Journal, 2021, 420,130530.
(11)Min Jin, Xudong Bai, Ziqi Tang, et al. Fabrication of InSb crystal via Horizontal Bridgman method and investigation on its thermoelectric properties. Materials Research Bulletin, 2021, 142: 111411.
(12)Min Jin, Wenhui Yang, Xianghu Wang, et al. Growth and characterization of ZnTe
single crystal via a novel Te flux vertical Bridgman method. Rare Met.2021, 40(4):858-864.
(13)Min Jin, Xudong Bai, Wenhui Yang, et al. Growth of ZnTe crystal via directional solidification method and study of its mechanical properties. J Mater Sci, 2021, 56:6306-6314.
(14)Cheng Qin, Min Jin, Rulin Zhang, et al.Preparation and thermoelectric properties of ZnTe-doped Bi0.5Sb1.5Te3 single crystal, Materials Letters,2021, 292, 129619.
(15)Min Jin, Xudong Bai, Su Zhao, et al.Mechanical Property of SnSe Single Crystal Prepared via Vertical Bridgman Method. Journal of Inorganic Materials. 2021,36(3), 313-318.
(16)Min Jin, Ziqi Tang, Rulin Zhang, et al., Growth of large size SnSe crystal via directional solidification and evaluation of its properties, Journal of Alloys and Compounds. 2020, 824: 153869.
(17)Min Jin, Ziqi Tang, Rulin Zhang, et al.,Growth of SnSecrystal via vapor deposition method and characterization of its properties. Materials Research Bulletin, 2020, 126:110819.
(18)Min Jin, Ziqi Tang, Rulin Zhang, et al., Growth of GaSb Crystal and Evaluation of Its Thermoelectric Properties Along (111) Plane. Crystal Research Technology. 2019, 1900156.
(19)Min Jin, Siqi Lin, Wen Li, et al., Fabrication and thermoelectric properties of single crystal argyrodite Ag8SnSe6. Chemistry of Materials. 2019, 31(7): 2603-2610.
(20)Min Jin, Jun Jiang, Rongbin Li, et al., Growth of large size SnSe single crystaland comparison of its thermoelectric property with polycrystal,Materials Research Bulletin. 2019, 114: 156-160.
(21)Min Jin, Jun Jiang, Rongbin Li, et al., Thermoelectric Properties of Pure SnSe Single Crystal Prepared by a Vapor Deposition Method. Crystal Research Technology. 2019, 1900032.
(22)Min Jin,Zhiwei Chen, Xiaojian Tan, Hezhu Shao, Guoqiang Liu, Haoyang Hu, Jingtao Xu, Bo Yu, Hui Shen, et al. Charge transport in thermoelectric SnSe single crystals,ACS Energy Letters, 2018, 3, 689-694.
(23)Jiayue Xu, Xiaoxiao Liang, Min Jin. Growth and characterization of all-inorganic perovskite CsPbBr3 crystal by a traveling zone melting method.Journal of Inorganic Materials,2018, 11(33),1253-1258
(24)HezhuShao, Min Jin, Hao Zhang, Haochuan Jiang,et al. First-principles study of manipulating the phonon transport of Molybdenum disulfide by Na-intercalating, Journal of Physical Chemistry C,2018, 122, 2632-2640.
(25)Min Jin, Hezhu Shao, Haoyang Hu, Debo Li, et al. Growth and characterization of large size undoped p-type SnSe single crystal by Horizontal Bridgman method, Journal of Alloys and Compounds,2017, 712: 857-862.
(26)Min Jin, Hezhu Shao, Haoyang Hu, Jiayue Xu, Jun Jiang, Single crystal growth of Sn0.97Ag0.03Se by a novel horizontal Bridgman method and its thermoelectric properties, Journal of Crystal Growth, 2017, 460: 112-116.
(27)Min Jin, Hui Shen, Shiji Fan, Qingbo He, Jiayue Xu. Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method, Crystal research and technology, 2017, 1700052.
四、主要社會學術團體兼職
《人工晶體學報》、《應用技術學報》及《上海電機學報》等期刊編委。
五、主要研究方向
晶體生長與表征，半導體材料開發及應用。
六🏃🏻♂️、在研項目
(1)Ag基硫銀鍺礦晶體結構穩定性調控及熱電性能優化研究，國家自然科學基金面上項目🤱🏽👱🏻♂️，54萬🏌🏻♀️，主持。
(2)快離子類導體晶體生長及熱電性能研究，上海市教委曙光計劃項目，15萬，主持▪️。
(3)Ag基快離子晶體銀離子析出行為及熱電穩定性優化研究，上海市自然科學基金✍🏿，20萬，主持🫨。
(4)超柔性InSe晶體生長及熱電/力學性能協同調控研究🙍🏻♂️，晶體材料國家重點實驗室開放課題🔷，10萬🤚🏽，主持。
(5)先進無機半導體熱電轉換材料的開發與應用，烏鎮實驗室PI團隊建設項目(柔性)，600萬，參與。
七、聯系方式
Email:jinm@sdju.edu.cn